? 2017 ixys corporation, all rights reserved. v ces = 2500v i c110 = 8a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 4.0v t fi(typ) = 86ns ds100835a(5/17) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 2500 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 10 ? a t j = 150 ? c 3 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 8a, v ge = 15v, note 1 3.35 4.00 v t j = 150 ? c 4.75 v symbol test conditions maximum ratings v ces t j = 25c to 175c 2500 v v cgr t j = 25c to 175c, r ge = 1m ? 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 29 a i c110 t c = 110c 8 a i cm t c = 25c, 1ms 70 a ssoa v ge = 15v, t vj = 150c, r g = 15 ? i cm = 32 a (rbsoa) clamped inductive load 1500 v p c t c = 25c 280 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight to-263hv 2.5 g to-247hv 6.0 g high voltage xpt tm igbt advance technical information features ? high voltage packages ? high blocking voltage ? high peak current capability ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches IXYA8N250CHV ixyh8n250chv to-247hv (ixyh) c (tab) g e c g = gate c = collector e = emitter tab = collector g e to-263hv (ixya) c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXYA8N250CHV ixyh8n250chv ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 8a, v ce = 10v, note 1 5.4 9.0 s r gi gate input resistance 11 ? c ie s 936 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 57 pf c res 14 pf q g(on) 45 nc q ge i c = 8a, v ge = 15v, v ce = 0.5 ? v ces 6 nc q gc 21 nc t d(on) 11 ns t ri 5 ns e on 2.60 mj t d(off) 180 ns t fi 86 ns e of f 1.07 mj t d(on) 12 ns t ri 12 ns e on 3.70 mj t d(off) 200 ns t fi 128 ns e off 1.20 mj r thjc 0.53 c/w r thcs to-247hv 0.21 c/w inductive load, t j = 25c i c = 8a, v ge = 15v v ce = 0.5 ? v ces , r g = 15 ? note 2 inductive load, t j = 150c i c = 8a, v ge = 15v v ce = 0.5 ? v ces , r g = 15 ? note 2 to-247hv outline pins: 1 - gate 2 - emitter 3, 4 - collector e r a q s a3 e d c b a1 l1 d3 d1 d2 e2 e3 3x 2x 4x 3x a2 b1 0p e1 0p1 4 3 1 2 e1 l to-263hv outline pin: 1 - gate 2 - emitter 3 - collector + h b d e l1 c2 b2 a1 e2 e1 a + c e1 d1 l4 l3 1 2 3 gauge plane 0o - 8o a2
? 2017 ixys corporation, all rights reserved. fig. 1. output characteristics @ t j = 25 o c 0 2 4 6 8 10 12 14 16 00.511.522.533.544.555.5 v ce - volts i c - amperes v ge = 15v 12v 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ t j = 25 o c 0 20 40 60 80 100 120 0 5 10 15 20 25 v ce - volts i c - amperes v ge = 15v 10v 8v 11v 12v 7v 6v 9v 14v 13v fig. 3. output characteristics @ t j = 150 o c 0 2 4 6 8 10 12 14 16 012345678 v ce - volts i c - amperes 8v v ge = 15v 13v 11v 10v 9v 5v 6v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 8a i c = 4a i c = 16a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 16a t j = 25 o c 8a 4a fig. 6. input admittance 0 5 10 15 20 25 30 35 44.555.566.577.588.599.5 v ge - volts i c - amperes t j = 150 o c 25 o c - 40 o c IXYA8N250CHV ixyh8n250chv
ixys reserves the right to change limits, test conditions, and dimensions. IXYA8N250CHV ixyh8n250chv fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 50 i c - amperes g f s - siemens t j = - 40 o c 25 o c 150 o c fig. 10. reverse-bias safe operating area 0 4 8 12 16 20 24 28 32 36 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 150 o c r g = 15 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v ge - volts v ce = 1250v i c = 8a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2017 ixys corporation, all rights reserved. fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 10 20 30 40 50 60 70 80 90 100 r g - ohms e off - millijoules 2 4 6 8 10 12 e on - millijoules e off e on t j = 150 o c , v ge = 15v v ce = 1250v i c = 8a i c = 16a fig. 15. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 r g - ohms t f i - nanoseconds 0 100 200 300 400 500 600 t d(off) - nanoseconds t f i t d(off) t j = 150 o oc, v ge = 15v v ce = 1250v i c = 8a i c = 16a fig. 13. inductive switching energy loss vs. collector current 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 8 9 10 11 12 13 14 15 16 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on r g = 15 ? ????? v ge = 15v v ce = 1250v t j = 150 o c t j = 25 o c fig. 14. inductive switching energy loss vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on r g = 15 ? ???? v ge = 15v v ce = 1250v i c = 8a i c = 16a fig. 16. inductive turn-off switching times vs. collector current 60 80 100 120 140 160 180 8 9 10 11 12 13 14 15 16 i c - amperes t f i - nanoseconds 120 140 160 180 200 220 240 t d(off) - nanoseconds t f i t d(off) r g = 15 ? ? , v ge = 15v v ce = 1250v t j = 150 o c t j = 25 o c fig. 17. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 140 160 180 200 220 240 260 t d(off) - nanoseconds t f i t d(off) r g = 15 ? ? , v ge = 15v v ce = 1250v i c = 16a i c = 8a i c = 16a IXYA8N250CHV ixyh8n250chv
ixys reserves the right to change limits, test conditions, and dimensions. IXYA8N250CHV ixyh8n250chv ixys ref: ixy_8n250c(3t-p628) 1-31-17 fig. 19. inductive turn-on switching times vs. collector current 0 5 10 15 20 25 30 8 9 10 11 12 13 14 15 16 i c - amperes t r i - nanoseconds 8 10 12 14 16 18 20 t d(on) - nanoseconds t r i t d(on) r g = 15 ? ? , v ge = 15v v ce = 1250v t j = 25 o c t j = 150 o c fig. 20. inductive turn-on switching times vs. junction temperature 0 5 10 15 20 25 30 35 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 6 8 10 12 14 16 18 20 t d(on) - nanoseconds t r i t d(on) r g = 15 ? ? , v ge = 15v v ce = 1250v i c = 16a i c = 8a fig. 18. inductive turn-on switching times vs. gate resistance 0 10 20 30 40 50 60 10 20 30 40 50 60 70 80 90 100 r g - ohms t r i - nanoseconds 0 10 20 30 40 50 60 t d(on) - nanoseconds t r i t d(on) t j = 150 o c, v ge = 15v v ce = 1250v i c = 8a i c = 16a
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